schottky barrier diode RB051L-40 z z z z applications high frequency rectification for switching power supply z z z z features 1) compact power mold type. (pmds) 2) ultra low v f . (v f =0.29v typ. at 1a) 3) v rm =40v guaranteed. z z z z construction silicon epitaxial planar z z z z external dimensions (units : mm) rohm : pmds eiaj : ? jedec : sod-106 0.1 cathode mark 4.5 0.2 2.6 0.2 2.0 0.2 1.2 0.3 1.5 0.2 5.0 0.3 + 0.02 ? 0.1 31 , date of manufacture ex. 1999.12 9, c z z z z absolute maximum ratings (ta = 25 c) ? t l 90 c max. 180 half sine wave when mounted on an alumina substrate (82 30 1.0 mm) parameter symbol v rm limits 40 unit v v r 20 v i o 3.0 a i fsm 70 a tj 125 c tstg ? 40 ~ + 125 c peak reverse voltage dc reverse voltage mean rectifying current ? peak forward surge current (60hz 1 ) junction temperature storage temperature z z z z electrical characteristics (ta = 25 c) parameter forward voltage reverse current symbol typ. conditions v f 1 v f 2 ? ? i r 1 i r 2 ? ? max. 0.35 0.45 1.0 150 unit v v ma a i f = 1.0a i f = 3.0a v r = 20v v r = 15v product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
z z z z electrical characteristic curves (ta = 25 c) 0 0.2 0.3 0.4 0.5 0.1 forward current : i f (a) forward voltage : v f (v) c 5 2 1 = a t c 5 7 c 5 2 c 5 2 ? fig. 1 forward characteristics 1m 100m 10m 10 1 0 20304050 10 1 10 1m 100 100m 10m reverse current : i r (a) reverse voltage : v r (v) ta = 125 c 75 c 25 c ? 25 c fig. 2 reverse characteristics 0101520253035 5 10 100 1000 terminal capacitance : c t ( pf) reverse voltage : v r (v) fig. 3 capacitance between terminals characteristics 5.0 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 average rectified forward current : i o (a) ambient temperature : ta ( c ) d = 0.8 d = 0.5 sine d = 0.3 d = 0.2 d = 0.1 d = 0.05 dc tp t d = tp / t v r = v rm / 2 i f i o fig. 4 derating curve (i o - ta) 5.0 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 average rectified forward current : i o (a) lead temperature : t l ( c ) d = 0.8 d = 0.5 sine wave d = 0.3 d = 0.2 d = 0.1 d = 0.05 dc tp t d = tp / t v r = v rm / 2 i o i f fig. 5 derating curve (i o - t l ) (when mounted on almina pcbs) 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.4 0.2 0.6 0.8 1.0 1.2 1.4 forward power dissipation : p f ( w) average rectified forward current : i o (a) d = 0.05 d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 dc tp t d = tp / t tj = tj max. i f i o sine fig. 6 forward power dissipation characteristics 0 0 2 4 6 8 101214161820 0.10 0.20 0.30 0.40 0.50 reverse power dissipation : p r ( w) reverse voltage : v r ( v) d = 0.8 sine v r v r 0 tp t tj = tj max. tj = tj max. d = tp / t dc d = 0.05 d = 0.1 d = 0.2 d = 0.3 d = 0.5 fig. 7 reverse power dissipation characteristics 5.0 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 average rectified forward current : i o (a) ambient temperature : ta ( c) d = 0.8 d = 0.5 sine d = 0.3 d = 0.2 d = 0.1 d = 0.05 dc tp t d = tp / t v r = v rm / 2 i f i o fig. 8 derating curve (when mounted on a glass epoxy pcbs board) product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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